The specific principle of cesium iodide/amorphous silicon flat panel detector:
1. Before exposure, make the silicon surface store cations to generate uniform charges, resulting in an electronic field on the silicon surface;
2. During exposure, electron-hole pairs are generated in the silicon, and free electrons dissociate to the surface, resulting in a potential charge image on the silicon surface, and the charge density at each point is equivalent to the local X-ray intensity.
3. After exposure, the X-ray image is stored in each pixel;
4. The semiconductor converter reads out each pixel and completes the analog-to-digital conversion.
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