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X-ray DR flat panel detector is mainly composed of an amorphous selenium layer T FT flat panel detector

X-ray DR flat panel detectors can be divided into two ways of energy conversion: indirect conversion X-ray DR flat panel detectors and direct conversion X-ray DR flat panel detectors.

The indirect conversion flat panel detector consists of a scintillation crystal coating such as cesium iodide and a thin film transistor or a charge coupled device or a complementary metal oxide semiconductor entary Metal Oxide S em i -Conductor. The working process of indirect conversion X-ray DR flat panel detector is generally divided into two steps. First, the scintillation crystal coating converts the energy of X-rays into visible light; secondly, TF T or C CD or C MO S converts visible light into electrical signals. The direct conversion X-ray DR flat panel detector is mainly composed of an amorphous selenium layer T FT. The incident X-rays cause the selenium layer to generate electron-hole pairs. Under the action of an externally biased electric field, the electrons and holes move in opposite directions to form a current, and the current forms a stored charge in the thin film transistor. The amount of stored charge of each transistor corresponds to the dose of incident X-rays. Today’s sharing is here first. In addition, our company specializes in the production of various vertical and mobile chest film racks, various types of X-ray machine parts and X-ray DR flat panel detectors. Welcome to call and negotiate!