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The scintillator coating of the X-ray flat panel detector is divided into cesium iodide and gadolinium oxysulfide

At present, there are two common scintillator coating materials for X-ray flat panel detectors: cesium iodide and gadolinium oxysulfide. The material and process of the scintillator coating affect the ability of X-rays to convert into visible light, so it will have an impact on DQE. The ability of cesium iodide X-ray flat panel detectors to convert X-rays into visible light is stronger than that of gadolinium oxysulfide but the cost is relatively high. High; processing cesium iodide into a columnar structure can further improve the ability to capture X-rays and reduce scattered light. X-ray flat panel detectors using gadolinium oxysulfide as coating have fast imaging speed, stable performance and low cost, but the conversion efficiency is not as high as that of cesium iodide coating. Secondly, the way the visible light generated by the scintillator is converted into an electrical signal will also have an impact on DQE. In the X-ray flat panel detector with the structure of cesium iodide (or gadolinium oxysulfide) thin film transistor (TFT), because the TFT array can be made as large as the area of the scintillator coating, the visible light does not need to be refracted by the lens It can be projected onto the TFT, and there is no photon loss in the middle, so the DQE is relatively high; in the amorphous selenium flat panel detector, the conversion of X-rays into electrical signals is completely dependent on the electron-hole pairs generated by the amorphous selenium layer, and the level of DQE Depends on the ability of the amorphous selenium layer to generate charges. In general, the limit DQE of the indirect conversion X-ray flat panel detector with the structure of CsI TFT is higher than the limit DQE of the a-Se direct conversion X-ray flat panel detector.

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