The difference between amorphous silicon plate + cesium iodide and amorphous silicon plate + gadolinium oxide plate

The progress of DR technology is closely related to the development of image board technology. The development of flat panel detector technology is mainly reflected in two aspects: size and dynamic response time. The cesium iodide/amorphous silicon flat panel detector has unparalleled advantages in these two aspects, and is currently the most mature and mainstream technology. Currently, major manufacturers in the world are using this technology.
Cesium iodide/amorphous silicon flat panel detector + TFT: When x-rays are incident on the CSI scintillation crystal layer, the x-ray photon energy is converted into visible light photon emission. The visible light excites the photodiode to generate current, and the current is accumulated on the photodiode’s capacitor to form storage Charge; The results show that the energy of ray photons is proportional to the number of photons, which improves the overall level of imaging speed, image quality and work efficiency.
Gadolinium oxide/amorphous silicon (Gd2O2S) flat panel detector + TFT: The working process is similar to the above, but cesium iodide is replaced by gadolinium oxide; due to technical reasons, the original image grayscale is 12 bit / 4096, convert a/D to 14bit; The process cost is lower, but the comprehensive technical level is worse than that of the cesium iodide board.
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Author：肖恩