The DR composed of flat panel detectors is mainly divided into two types: one is amorphous silicon flat panel detector, which belongs to indirect energy transfer; the other is amorphous selenium flat panel detector, which belongs to direct energy conversion method. The difference between the two is:
①, the structure is different. The structure of the amorphous silicon flat panel detector is mainly composed of scintillator and photoreceptor (amorphous silicon layer with photodiode function) and TFT array; the structure of amorphous selenium flat panel detector is mainly composed of amorphous selenium layer and TFT array.
②, A/D conversion principle is different. The principle of amorphous silicon is that after the scintillator is exposed to X-rays, X-ray photons are converted into visible light, and then the amorphous silicon layer with a photodiode function is converted into an image electrical signal, which passes through the TFT detection array and then converted by A/D to finally obtain a digital image; the principle of amorphous selenium is that the amorphous selenium layer directly generates electrical signals after X-ray exposure, passes through the TFT detection array, and finally obtains a digital image through A/D conversion.
③. The difference between the fluorescent material layer and the detection element array layer. Compared with amorphous silicon flat panel detectors, the image quality of amorphous selenium flat panel detectors is clearer and sharper.
④. Amorphous selenium flat-panel detectors have very high requirements on the working environment during use, short life, high failure rate, and maintenance costs are much higher than amorphous silicon flat-panel detectors. Therefore, amorphous silicon flat-panel panels currently dominate the market.
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