The indirect conversion flat panel detector consists of a scintillation crystal coating such as cesium iodide and a thin film transistor (Turometer) or a charge coupled device (C hargeC oupling Device, C CD) or a complementary metal oxide semiconductor (Com plem) En tary M etal Oxide S em i -Conductor , CM OS). The working process of the indirect conversion flat panel detector is generally divided into two steps.
First, the scintillation crystal coating converts the X–ray energy into visible light; secondly, TF T or C CD , or C MO S converts the visible light into an electrical signal. Since visible light scatters during this process, it has a certain impact on spatial resolution. Although the scintillator is processed into a column in the new process to improve the utilization of X-rays and reduce scattering, the effect of scattered light on spatial resolution cannot be completely eliminated.
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